to-92 plastic-encapsulate mosfet s 2N7000 mosfet (n-channel) features z high density cell design for low r ds(on) z voltage controlled small signal switch z rugged and reliable z high saturation current capability maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp max unit drain-source breakdown voltage v (br)dss v gs =0 v, i d =10 a 60 gate-threshold voltage* v (gs) th v ds =v gs , i d =1ma 0.8 3 v gate-body leakage l gss v ds =0 v, v gs =15 v 10 na zero gate voltage drain current i dss v ds =60 v, v gs =0 v 1 a on-state drain current i d(on) v gs =4.5 v, v ds =10 v 75 ma v gs =4.5v, i d =75ma 6 drain-source on-resistance * r ds( o n) v gs =10v, i d =500ma 5 ? forward trans conductance * g fs v ds =10 v, i d =200ma 100 ms v gs =10v, i d =500ma 2.5 v drain-source on-voltage * v ds(on) v gs =4.5v, i d =75ma 0.45 v input capacitance c iss 60 output capacitance c oss 25 reverse transfer capacitance c r ss v ds =25v, v gs =0v, f=1mhz 5 pf turn-on time t d(on) 10 turn-off time t d(off) v dd =15 v, r l =30 i d =500ma,v gen =10 v r g =25 10 ns to-92 1. source 2. gate 3. drain paramete r s y mbo l v alu e unit drain-source voltage v ds 60 v continuous drain current i d 0.2 a power dissipation p d 0. 625 w thermal resistance from junction to ambient r ja 200 /w junction temperature t j 150 storage temperature t stg -5 5 ~+150 *pulse test **these parameters have no way to verify. ** ** ** ** ** ? ? 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
0.0 0.2 0.4 0.6 0.8 1.0 0 2 4 6 8 10 024681 0 0.0 0.2 0.4 0.6 0.8 1.0 0.4 0.6 0.8 1.0 1.2 1e-3 0.01 0.1 1 0481 21 62 0 0 1 2 3 4 5 6 024681 01 2 0.0 0.3 0.6 0.9 1.2 1.5 1.8 2N7000 ta=25 pulsed i d ?? r ds(on) vgs= 4.5v vgs=10v on-resistance r ds(on) ( ) drain current i d (a) ta=25 pulsed transfer characteristics drain current i d (a) gate to source voltage v gs (v) v sd i s ?? ta=25 pulsed source current i s (a) source to drain voltage v sd (v) i d =500ma ta=25 pulsed v gs ?? r ds(on) on-resistance r ds(on) ( ) gate to source voltage v gs (v) ta=25 pulsed 10v 9v 8v 7v output characteristics 6v 5v 4v v gs =3v drain current i d (a) drain to source voltage v ds (v) b 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification bc,nov,2012
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